DMBTA92 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for application as a video output to drive color crt, or as a dialer circuit in electronics telephone. pinning 1 = base 2 = emitter 3 = collector .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 characteristic symbol rating unit collector-base voltage vcbo -300 v collector-emitter voltage vceo -300 v emitter-base voltage vebo -5 v collector current ic -500 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -300 - - v ic=-100ma collector-emitter breakdown voltage bvceo -300 - - v ic=-1ma emitter-base breakdown volatge bvebo -5 - - v ie=-10ma collector cutoff current icbo - - -250 na vcb =-200v emitter cutoff current iebo - - -100 na veb =-3v collector-emitter saturation voltage (1) vce(sat) - - -0.5 v ic=-20ma, ib=-2ma base-emitter saturation voltage (1) vbe(sat) - - -0.9 v ic=-20ma, ib=-2ma hfe1 25 - - - ic=-1ma, vce=-10v dc current gain(1) hfe2 40 - - - ic=-10ma, vce=-10v hfe3 25 - - - ic=-30ma, vce=-10v transition frequency ft 50 - - mhz ic=-10ma, vce =-20v, f=100mhz output capacitance cob - - 6 pf vcb =-20v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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